Diodes Incorporated - ZXMN3F31DN8TA

KEY Part #: K6522845

ZXMN3F31DN8TA Pricing (USD) [193225pcs Stock]

  • 1 pcs$0.19142
  • 500 pcs$0.10528

Part Number:
ZXMN3F31DN8TA
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET 2N-CH 30V 5.7A 8SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Programmable Unijunction, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Power Driver Modules and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Diodes Incorporated ZXMN3F31DN8TA electronic components. ZXMN3F31DN8TA can be shipped within 24 hours after order. If you have any demands for ZXMN3F31DN8TA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMN3F31DN8TA Product Attributes

Part Number : ZXMN3F31DN8TA
Manufacturer : Diodes Incorporated
Description : MOSFET 2N-CH 30V 5.7A 8SOIC
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 5.7A
Rds On (Max) @ Id, Vgs : 24 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 608pF @ 15V
Power - Max : 1.8W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO