Vishay Siliconix - SI6913DQ-T1-E3

KEY Part #: K6522758

SI6913DQ-T1-E3 Pricing (USD) [85512pcs Stock]

  • 1 pcs$0.45726
  • 3,000 pcs$0.42841

Part Number:
SI6913DQ-T1-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2P-CH 12V 4.9A 8TSSOP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Bridge Rectifiers, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Arrays and Diodes - RF ...
Competitive Advantage:
We specialize in Vishay Siliconix SI6913DQ-T1-E3 electronic components. SI6913DQ-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI6913DQ-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI6913DQ-T1-E3 Product Attributes

Part Number : SI6913DQ-T1-E3
Manufacturer : Vishay Siliconix
Description : MOSFET 2P-CH 12V 4.9A 8TSSOP
Series : TrenchFET®
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 12V
Current - Continuous Drain (Id) @ 25°C : 4.9A
Rds On (Max) @ Id, Vgs : 21 mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id : 900mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : -
Power - Max : 830mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package : 8-TSSOP