Vishay Siliconix - SQJB68EP-T1_GE3

KEY Part #: K6525354

SQJB68EP-T1_GE3 Pricing (USD) [219327pcs Stock]

  • 1 pcs$0.16864

Part Number:
SQJB68EP-T1_GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2 N-CH 100V POWERPAK SO8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Power Driver Modules, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Vishay Siliconix SQJB68EP-T1_GE3 electronic components. SQJB68EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJB68EP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJB68EP-T1_GE3 Product Attributes

Part Number : SQJB68EP-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET 2 N-CH 100V POWERPAK SO8
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 11A (Tc)
Rds On (Max) @ Id, Vgs : 92 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 280pF @ 25V
Power - Max : 27W
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Package / Case : PowerPAK® SO-8 Dual
Supplier Device Package : PowerPAK® SO-8 Dual

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