Part Number :
SSM6N35FE,LM
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET 2N-CH 20V 0.18A ES6
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
180mA
Rds On (Max) @ Id, Vgs :
3 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id :
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
9.5pF @ 3V
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
SOT-563, SOT-666
Supplier Device Package :
ES6 (1.6x1.6)