SI3585CDV-T1-GE3 Pricing (USD) [431769pcs Stock]
- 1 pcs$0.25707
- 10 pcs$0.21515
- 100 pcs$0.16132
- 500 pcs$0.11830
- 1,000 pcs$0.09141
- Part Number:
- SI3585CDV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N/P-CH 20V 3.9A 6TSOP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - JFETs and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI3585CDV-T1-GE3 electronic components. SI3585CDV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3585CDV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3585CDV-T1-GE3 Product Attributes
Part Number :
SI3585CDV-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N/P-CH 20V 3.9A 6TSOP
Series :
TrenchFET®
Part Status :
Active
FET Type :
N and P-Channel
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
3.9A, 2.1A
Rds On (Max) @ Id, Vgs :
58 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
150pF @ 10V
Power - Max :
1.4W, 1.3W
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package :
6-TSOP
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