Infineon Technologies - FF8MR12W2M1B11BOMA1

KEY Part #: K6522801

FF8MR12W2M1B11BOMA1 Pricing (USD) [380pcs Stock]

  • 1 pcs$122.02780

Part Number:
FF8MR12W2M1B11BOMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET MODULE 1200V 150A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Diodes - Zener - Arrays, Transistors - IGBTs - Modules, Diodes - Rectifiers - Arrays, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in Infineon Technologies FF8MR12W2M1B11BOMA1 electronic components. FF8MR12W2M1B11BOMA1 can be shipped within 24 hours after order. If you have any demands for FF8MR12W2M1B11BOMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FF8MR12W2M1B11BOMA1 Product Attributes

Part Number : FF8MR12W2M1B11BOMA1
Manufacturer : Infineon Technologies
Description : MOSFET MODULE 1200V 150A
Series : CoolSiC™
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 150A (Tj)
Rds On (Max) @ Id, Vgs : 7.5 mOhm @ 150A, 15V (Typ)
Vgs(th) (Max) @ Id : 5.55V @ 60mA
Gate Charge (Qg) (Max) @ Vgs : 372nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds : 11000pF @ 800V
Power - Max : 20mW (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : AG-EASY2BM-2