SI4532CDY-T1-GE3 Pricing (USD) [315289pcs Stock]
- 1 pcs$0.11731
- 2,500 pcs$0.11039
- Part Number:
- SI4532CDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N/P-CH 30V 6A 8-SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - IGBTs - Single, Transistors - Programmable Unijunction, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI4532CDY-T1-GE3 electronic components. SI4532CDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4532CDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4532CDY-T1-GE3 Product Attributes
Part Number :
SI4532CDY-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N/P-CH 30V 6A 8-SOIC
Series :
TrenchFET®
Part Status :
Active
FET Type :
N and P-Channel
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
6A, 4.3A
Rds On (Max) @ Id, Vgs :
47 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
305pF @ 15V
Power - Max :
2.78W
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package :
8-SO
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