Vishay Siliconix - SUM40012EL-GE3

KEY Part #: K6397572

SUM40012EL-GE3 Pricing (USD) [61105pcs Stock]

  • 1 pcs$0.63990

Part Number:
SUM40012EL-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 40V D2PAK TO-263.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single and Thyristors - SCRs ...
Competitive Advantage:
We specialize in Vishay Siliconix SUM40012EL-GE3 electronic components. SUM40012EL-GE3 can be shipped within 24 hours after order. If you have any demands for SUM40012EL-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SUM40012EL-GE3 Product Attributes

Part Number : SUM40012EL-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 40V D2PAK TO-263
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.67 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 10930pF @ 20V
FET Feature : -
Power Dissipation (Max) : 150W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263 (D²Pak)
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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