FCD2250N80Z Pricing (USD) [152236pcs Stock]
- 1 pcs$0.24296
- 5,000 pcs$0.23145
- Part Number:
- FCD2250N80Z
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 800V 2.6A TO252-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Arrays and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in ON Semiconductor FCD2250N80Z electronic components. FCD2250N80Z can be shipped within 24 hours after order. If you have any demands for FCD2250N80Z, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCD2250N80Z Product Attributes
Part Number :
FCD2250N80Z
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 800V 2.6A TO252-3
Series :
SuperFET® II
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.25 Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id :
4.5V @ 260µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
585pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
39W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D-Pak
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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