[13204pcs Stock]
- Part Number:
- IRLBD59N04ETRLP
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 40V 59A D2PAK-5.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Transistors - IGBTs - Modules, Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRLBD59N04ETRLP electronic components. IRLBD59N04ETRLP can be shipped within 24 hours after order. If you have any demands for IRLBD59N04ETRLP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLBD59N04ETRLP Product Attributes
Part Number :
IRLBD59N04ETRLP
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 40V 59A D2PAK-5
Series :
HEXFET®
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
5V, 10V
Rds On (Max) @ Id, Vgs :
18 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 5V
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
2190pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
130W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-263-5
Package / Case :
TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
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