Part Number :
TK290A65Y,S4X
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 650V 11.5A TO220SIS
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Current - Continuous Drain (Id) @ 25°C :
11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
290 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id :
4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
730pF @ 300V
Power Dissipation (Max) :
35W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220SIS
Package / Case :
TO-220-3 Full Pack