Part Number :
TK22A10N1,S4X
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 100V 52A TO-220
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
13.8 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id :
4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 50V
Power Dissipation (Max) :
30W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220SIS
Package / Case :
TO-220-3 Full Pack