Toshiba Semiconductor and Storage - TK22A10N1,S4X

KEY Part #: K6397593

TK22A10N1,S4X Pricing (USD) [65859pcs Stock]

  • 1 pcs$0.65642
  • 50 pcs$0.52413
  • 100 pcs$0.45861
  • 500 pcs$0.33643
  • 1,000 pcs$0.26560

Part Number:
TK22A10N1,S4X
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 100V 52A TO-220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Transistors - JFETs, Diodes - RF, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Arrays and Transistors - Bipolar (BJT) - Single ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK22A10N1,S4X electronic components. TK22A10N1,S4X can be shipped within 24 hours after order. If you have any demands for TK22A10N1,S4X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK22A10N1,S4X Product Attributes

Part Number : TK22A10N1,S4X
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 100V 52A TO-220
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 13.8 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 50V
FET Feature : -
Power Dissipation (Max) : 30W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack

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