Vishay Siliconix - SQJA06EP-T1_GE3

KEY Part #: K6420283

SQJA06EP-T1_GE3 Pricing (USD) [178202pcs Stock]

  • 1 pcs$0.20756
  • 3,000 pcs$0.17541

Part Number:
SQJA06EP-T1_GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 60V 57A POWERPAKSO-8.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Power Driver Modules, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Transistors - IGBTs - Arrays and Transistors - JFETs ...
Competitive Advantage:
We specialize in Vishay Siliconix SQJA06EP-T1_GE3 electronic components. SQJA06EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJA06EP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJA06EP-T1_GE3 Product Attributes

Part Number : SQJA06EP-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 60V 57A POWERPAKSO-8
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 8.7 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2800pF @ 25V
FET Feature : -
Power Dissipation (Max) : 55W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PowerPAK® SO-8
Package / Case : PowerPAK® SO-8