DMNH10H028SCT Pricing (USD) [55012pcs Stock]
- 1 pcs$0.67732
- 50 pcs$0.54085
- 100 pcs$0.47325
- 500 pcs$0.34717
- 1,000 pcs$0.27408
- Part Number:
- DMNH10H028SCT
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET BVDSS 61V 100VTO220-3T.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Thyristors - TRIACs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - Special Purpose and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMNH10H028SCT electronic components. DMNH10H028SCT can be shipped within 24 hours after order. If you have any demands for DMNH10H028SCT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMNH10H028SCT Product Attributes
Part Number :
DMNH10H028SCT
Manufacturer :
Diodes Incorporated
Description :
MOSFET BVDSS 61V 100VTO220-3T
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
28 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
31.9nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1942pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
2.8W (Ta)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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