TK10A60E,S5X Pricing (USD) [57024pcs Stock]
- 1 pcs$0.68568
- Part Number:
- TK10A60E,S5X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 600V TO220SIS.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Arrays and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK10A60E,S5X electronic components. TK10A60E,S5X can be shipped within 24 hours after order. If you have any demands for TK10A60E,S5X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK10A60E,S5X Product Attributes
Part Number :
TK10A60E,S5X
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 600V TO220SIS
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
750 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
45W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220SIS
Package / Case :
TO-220-3 Full Pack
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