R8010ANX Pricing (USD) [29315pcs Stock]
- 1 pcs$1.54686
- 10 pcs$1.38159
- 100 pcs$1.07481
- 500 pcs$0.87033
- 1,000 pcs$0.73402
- Part Number:
- R8010ANX
- Manufacturer:
- Rohm Semiconductor
- Detailed description:
- MOSFET N-CH 800V 10A TO220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Rohm Semiconductor R8010ANX electronic components. R8010ANX can be shipped within 24 hours after order. If you have any demands for R8010ANX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
R8010ANX Product Attributes
Part Number :
R8010ANX
Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 800V 10A TO220
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Current - Continuous Drain (Id) @ 25°C :
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
560 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1750pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
40W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220FM
Package / Case :
TO-220-3 Full Pack
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