Vishay Siliconix - SIR840DP-T1-GE3

KEY Part #: K6407810

[844pcs Stock]


    Part Number:
    SIR840DP-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET N-CH 30V PPAK SO-8.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Single, Power Driver Modules, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SIR840DP-T1-GE3 electronic components. SIR840DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIR840DP-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SIR840DP-T1-GE3 Product Attributes

    Part Number : SIR840DP-T1-GE3
    Manufacturer : Vishay Siliconix
    Description : MOSFET N-CH 30V PPAK SO-8
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : -
    Drive Voltage (Max Rds On, Min Rds On) : -
    Rds On (Max) @ Id, Vgs : -
    Vgs(th) (Max) @ Id : -
    Gate Charge (Qg) (Max) @ Vgs : -
    Vgs (Max) : -
    Input Capacitance (Ciss) (Max) @ Vds : -
    FET Feature : -
    Power Dissipation (Max) : -
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : PowerPAK® SO-8
    Package / Case : PowerPAK® SO-8

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