Rohm Semiconductor - RSS100N03FU6TB

KEY Part #: K6406710

RSS100N03FU6TB Pricing (USD) [1225pcs Stock]

  • 2,500 pcs$0.24667

Part Number:
RSS100N03FU6TB
Manufacturer:
Rohm Semiconductor
Detailed description:
MOSFET N-CH 30V 10A 8SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - RF and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Rohm Semiconductor RSS100N03FU6TB electronic components. RSS100N03FU6TB can be shipped within 24 hours after order. If you have any demands for RSS100N03FU6TB, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RSS100N03FU6TB Product Attributes

Part Number : RSS100N03FU6TB
Manufacturer : Rohm Semiconductor
Description : MOSFET N-CH 30V 10A 8SOIC
Series : -
Part Status : Obsolete
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 13 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 5V
Vgs (Max) : 20V
Input Capacitance (Ciss) (Max) @ Vds : 1070pF @ 10V
FET Feature : -
Power Dissipation (Max) : 2W (Ta)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOP
Package / Case : 8-SOIC (0.154", 3.90mm Width)

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