ON Semiconductor - FQPF1N50

KEY Part #: K6413636

[8402pcs Stock]


    Part Number:
    FQPF1N50
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 500V 0.9A TO-220F.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Thyristors - SCRs - Modules, Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Thyristors - SCRs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
    Competitive Advantage:
    We specialize in ON Semiconductor FQPF1N50 electronic components. FQPF1N50 can be shipped within 24 hours after order. If you have any demands for FQPF1N50, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQPF1N50 Product Attributes

    Part Number : FQPF1N50
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 500V 0.9A TO-220F
    Series : QFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 500V
    Current - Continuous Drain (Id) @ 25°C : 900mA (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 9 Ohm @ 450mA, 10V
    Vgs(th) (Max) @ Id : 5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 5.5nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 150pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 16W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : TO-220F
    Package / Case : TO-220-3 Full Pack

    You May Also Be Interested In
    • IRF5804TR

      Infineon Technologies

      MOSFET P-CH 40V 2.5A 6-TSOP.

    • IRF5805TR

      Infineon Technologies

      MOSFET P-CH 30V 3.8A 6-TSOP.

    • IRF5800TR

      Infineon Technologies

      MOSFET P-CH 30V 4A 6-TSOP.

    • ZVNL110ASTOB

      Diodes Incorporated

      MOSFET N-CH 100V 320MA TO92-3.

    • ZVN4306ASTOB

      Diodes Incorporated

      MOSFET N-CH 60V 1.1A TO92-3.

    • ZVN4306ASTOA

      Diodes Incorporated

      MOSFET N-CH 60V 1.1A TO92-3.