Vishay Siliconix - SIHF22N60E-E3

KEY Part #: K6417017

SIHF22N60E-E3 Pricing (USD) [23090pcs Stock]

  • 1 pcs$1.78483

Part Number:
SIHF22N60E-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 600V 21A TO220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs - Modules, Thyristors - SCRs, Transistors - IGBTs - Modules and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix SIHF22N60E-E3 electronic components. SIHF22N60E-E3 can be shipped within 24 hours after order. If you have any demands for SIHF22N60E-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHF22N60E-E3 Product Attributes

Part Number : SIHF22N60E-E3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 600V 21A TO220
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : -
Rds On (Max) @ Id, Vgs : 180 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 86nC @ 10V
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : 1920pF @ 100V
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Through Hole
Supplier Device Package : TO-220 Full Pack
Package / Case : TO-220-3 Full Pack

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