TK33S10N1Z,LQ Pricing (USD) [146815pcs Stock]
- 1 pcs$0.27851
- 2,000 pcs$0.27713
- Part Number:
- TK33S10N1Z,LQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 100V 33A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Diodes - Zener - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Diodes - Bridge Rectifiers, Transistors - JFETs and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK33S10N1Z,LQ electronic components. TK33S10N1Z,LQ can be shipped within 24 hours after order. If you have any demands for TK33S10N1Z,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK33S10N1Z,LQ Product Attributes
Part Number :
TK33S10N1Z,LQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 100V 33A DPAK
Series :
U-MOSVIII-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
33A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9.7 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
28nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2050pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
125W (Tc)
Operating Temperature :
175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DPAK+
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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