ON Semiconductor - FDD8870

KEY Part #: K6416929

FDD8870 Pricing (USD) [135673pcs Stock]

  • 1 pcs$0.70659
  • 10 pcs$0.62506
  • 100 pcs$0.49382
  • 500 pcs$0.38297
  • 1,000 pcs$0.28601

Part Number:
FDD8870
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 30V 160A D-PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Power Driver Modules, Diodes - Zener - Single, Thyristors - SCRs - Modules, Transistors - Programmable Unijunction, Diodes - Zener - Arrays and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in ON Semiconductor FDD8870 electronic components. FDD8870 can be shipped within 24 hours after order. If you have any demands for FDD8870, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDD8870 Product Attributes

Part Number : FDD8870
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 30V 160A D-PAK
Series : PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 21A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.9 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 118nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5160pF @ 15V
FET Feature : -
Power Dissipation (Max) : 160W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252AA
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63