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  5. FQI17N08LTU

ON Semiconductor - FQI17N08LTU

KEY Part #: K6410749

[14029pcs Stock]

    Part Number:
    FQI17N08LTU
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET N-CH 80V 16.5A I2PAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs, Transistors - JFETs, Transistors - Programmable Unijunction, Transistors - IGBTs - Arrays and Diodes - Bridge Rectifiers ...
    Competitive Advantage:
    We specialize in ON Semiconductor FQI17N08LTU electronic components. FQI17N08LTU can be shipped within 24 hours after order. If you have any demands for FQI17N08LTU, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FQI17N08LTU Product Attributes

    Part Number : FQI17N08LTU
    Manufacturer : ON Semiconductor
    Description : MOSFET N-CH 80V 16.5A I2PAK
    Series : QFET®
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 80V
    Current - Continuous Drain (Id) @ 25°C : 16.5A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 5V, 10V
    Rds On (Max) @ Id, Vgs : 100 mOhm @ 8.25A, 10V
    Vgs(th) (Max) @ Id : 2V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 11.5nC @ 5V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 520pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 3.75W (Ta), 65W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : I2PAK (TO-262)
    Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA

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