Vishay Siliconix - SIZ350DT-T1-GE3

KEY Part #: K6522488

SIZ350DT-T1-GE3 Pricing (USD) [174547pcs Stock]

  • 1 pcs$0.21190

Part Number:
SIZ350DT-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET DUAL N-CHAN 30V POWERPAIR.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - Programmable Unijunction, Thyristors - SCRs - Modules, Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in Vishay Siliconix SIZ350DT-T1-GE3 electronic components. SIZ350DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ350DT-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIZ350DT-T1-GE3 Product Attributes

Part Number : SIZ350DT-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET DUAL N-CHAN 30V POWERPAIR
Series : TrenchFET® Gen IV
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 18.5A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs : 6.75 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 940pF @ 15V
Power - Max : 3.7W (Ta), 16.7W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerWDFN
Supplier Device Package : 8-Power33 (3x3)