Vishay Siliconix - SI4804CDY-T1-E3

KEY Part #: K6522523

SI4804CDY-T1-E3 Pricing (USD) [308600pcs Stock]

  • 1 pcs$0.12046
  • 2,500 pcs$0.11986

Part Number:
SI4804CDY-T1-E3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2N-CH 30V 8A 8SO.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Arrays and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in Vishay Siliconix SI4804CDY-T1-E3 electronic components. SI4804CDY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4804CDY-T1-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4804CDY-T1-E3 Product Attributes

Part Number : SI4804CDY-T1-E3
Manufacturer : Vishay Siliconix
Description : MOSFET 2N-CH 30V 8A 8SO
Series : TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 8A
Rds On (Max) @ Id, Vgs : 22 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id : 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 865pF @ 15V
Power - Max : 3.1W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO