Infineon Technologies - IPW60R120P7XKSA1

KEY Part #: K6416800

IPW60R120P7XKSA1 Pricing (USD) [19605pcs Stock]

  • 1 pcs$2.00078
  • 10 pcs$1.78704
  • 100 pcs$1.46542
  • 500 pcs$1.18664
  • 1,000 pcs$0.94945

Part Number:
IPW60R120P7XKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 600V 26A TO247-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Single, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Arrays and Diodes - RF ...
Competitive Advantage:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPW60R120P7XKSA1 Product Attributes

Part Number : IPW60R120P7XKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 600V 26A TO247-3
Series : CoolMOS™ P7
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 120 mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id : 4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs : 36nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1544pF @ 400V
FET Feature : -
Power Dissipation (Max) : 95W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO247-3
Package / Case : TO-247-3

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