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  5. FQD3N60CTM-WS

ON Semiconductor - FQD3N60CTM-WS

KEY Part #: K6416717

FQD3N60CTM-WS Pricing (USD) [193834pcs Stock]

  • 1 pcs$0.19082
Part Number:
FQD3N60CTM-WS
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 600V 2.4A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Single, Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in ON Semiconductor FQD3N60CTM-WS electronic components. FQD3N60CTM-WS can be shipped within 24 hours after order. If you have any demands for FQD3N60CTM-WS, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQD3N60CTM-WS Product Attributes

Part Number : FQD3N60CTM-WS
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 600V 2.4A DPAK
Series : QFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.4 Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 565pF @ 25V
FET Feature : -
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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