2N7000-D26Z Pricing (USD) [1178592pcs Stock]
- 1 pcs$0.03138
- Part Number:
- 2N7000-D26Z
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 60V 200MA TO-92.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - Special Purpose, Transistors - Programmable Unijunction, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor 2N7000-D26Z electronic components. 2N7000-D26Z can be shipped within 24 hours after order. If you have any demands for 2N7000-D26Z, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2N7000-D26Z Product Attributes
Part Number :
2N7000-D26Z
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 60V 200MA TO-92
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id :
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
400mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-92-3
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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