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  5. NTMS3P03R2G

ON Semiconductor - NTMS3P03R2G

KEY Part #: K6411371

[13813pcs Stock]

    Part Number:
    NTMS3P03R2G
    Manufacturer:
    ON Semiconductor
    Detailed description:
    MOSFET P-CH 30V 2.34A 8-SOIC.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Transistors - Special Purpose, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Rectifiers - Single, Transistors - IGBTs - Arrays and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
    Competitive Advantage:
    We specialize in ON Semiconductor NTMS3P03R2G electronic components. NTMS3P03R2G can be shipped within 24 hours after order. If you have any demands for NTMS3P03R2G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NTMS3P03R2G Product Attributes

    Part Number : NTMS3P03R2G
    Manufacturer : ON Semiconductor
    Description : MOSFET P-CH 30V 2.34A 8-SOIC
    Series : -
    Part Status : Obsolete
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 30V
    Current - Continuous Drain (Id) @ 25°C : 2.34A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 85 mOhm @ 3.05A, 10V
    Vgs(th) (Max) @ Id : 2.5V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 25nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 750pF @ 24V
    FET Feature : -
    Power Dissipation (Max) : 730mW (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 8-SOIC
    Package / Case : 8-SOIC (0.154", 3.90mm Width)

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