IRLHS6342TRPBF Pricing (USD) [394804pcs Stock]
- 1 pcs$0.09369
- 4,000 pcs$0.08092
- Part Number:
- IRLHS6342TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 8.7A PQFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Arrays, Diodes - RF, Thyristors - SCRs, Diodes - Rectifiers - Arrays and Diodes - Rectifiers - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRLHS6342TRPBF electronic components. IRLHS6342TRPBF can be shipped within 24 hours after order. If you have any demands for IRLHS6342TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLHS6342TRPBF Product Attributes
Part Number :
IRLHS6342TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 8.7A PQFN
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
8.7A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
15.5 mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id :
1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
1019pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2.1W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-PQFN (2x2)
Package / Case :
6-PowerVDFN
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