Manufacturer :
Nexperia USA Inc.
Description :
MOSFET P-CH 12V 3.2A DFN1010D-3G
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Current - Continuous Drain (Id) @ 25°C :
3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
72 mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
634pF @ 6V
Power Dissipation (Max) :
317mW (Ta), 8.33W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
DFN1010D-3
Package / Case :
3-XDFN Exposed Pad