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  5. FDD6N50TM-WS

ON Semiconductor - FDD6N50TM-WS

KEY Part #: K6409558

FDD6N50TM-WS Pricing (USD) [177234pcs Stock]

  • 1 pcs$0.20869
Part Number:
FDD6N50TM-WS
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 500V 6A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Power Driver Modules, Diodes - Bridge Rectifiers, Diodes - Zener - Arrays, Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Transistors - JFETs and Diodes - Zener - Single ...
Competitive Advantage:
We specialize in ON Semiconductor FDD6N50TM-WS electronic components. FDD6N50TM-WS can be shipped within 24 hours after order. If you have any demands for FDD6N50TM-WS, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDD6N50TM-WS Product Attributes

Part Number : FDD6N50TM-WS
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 500V 6A DPAK
Series : UniFET™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 900 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 16.6nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 9400pF @ 25V
FET Feature : -
Power Dissipation (Max) : 89W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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