ON Semiconductor - FCD850N80Z

KEY Part #: K6409543

FCD850N80Z Pricing (USD) [85917pcs Stock]

  • 1 pcs$0.45510
  • 2,500 pcs$0.43461

Part Number:
FCD850N80Z
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 800V 6A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - JFETs, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Arrays, Power Driver Modules, Thyristors - SCRs, Transistors - IGBTs - Single and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in ON Semiconductor FCD850N80Z electronic components. FCD850N80Z can be shipped within 24 hours after order. If you have any demands for FCD850N80Z, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCD850N80Z Product Attributes

Part Number : FCD850N80Z
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 800V 6A DPAK
Series : SuperFET® II
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 850 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs : 29nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1315pF @ 100V
FET Feature : -
Power Dissipation (Max) : 75W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DPAK
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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