STS9P2UH7 Pricing (USD) [12434pcs Stock]
- 2,500 pcs$0.18272
- Part Number:
- STS9P2UH7
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET P-CH 20V 9A 8-SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - JFETs and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in STMicroelectronics STS9P2UH7 electronic components. STS9P2UH7 can be shipped within 24 hours after order. If you have any demands for STS9P2UH7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STS9P2UH7 Product Attributes
Part Number :
STS9P2UH7
Manufacturer :
STMicroelectronics
Description :
MOSFET P-CH 20V 9A 8-SOIC
Series :
STripFET™
Part Status :
Obsolete
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
22.5 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
2390pF @ 16V
FET Feature :
-
Power Dissipation (Max) :
2.7W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SO
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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