FCP190N60-GF102 Pricing (USD) [55513pcs Stock]
- 1 pcs$0.70435
- Part Number:
- FCP190N60-GF102
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 600V TO-220-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Diodes - Bridge Rectifiers, Thyristors - TRIACs and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in ON Semiconductor FCP190N60-GF102 electronic components. FCP190N60-GF102 can be shipped within 24 hours after order. If you have any demands for FCP190N60-GF102, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCP190N60-GF102 Product Attributes
Part Number :
FCP190N60-GF102
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 600V TO-220-3
Series :
SuperFET® II
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
199 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
74nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2950pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
208W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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