IXYS - IXTY4N60P

KEY Part #: K6418190

IXTY4N60P Pricing (USD) [55012pcs Stock]

  • 1 pcs$0.78576
  • 70 pcs$0.78185

Part Number:
IXTY4N60P
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH TO-252.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF, Power Driver Modules, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in IXYS IXTY4N60P electronic components. IXTY4N60P can be shipped within 24 hours after order. If you have any demands for IXTY4N60P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTY4N60P Product Attributes

Part Number : IXTY4N60P
Manufacturer : IXYS
Description : MOSFET N-CH TO-252
Series : PolarHV™
Part Status : Last Time Buy
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs : 13nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 635pF @ 25V
FET Feature : -
Power Dissipation (Max) : 89W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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