Toshiba Semiconductor and Storage - TK7A90E,S4X

KEY Part #: K6418195

TK7A90E,S4X Pricing (USD) [55337pcs Stock]

  • 1 pcs$0.77767
  • 50 pcs$0.62782
  • 100 pcs$0.56502
  • 500 pcs$0.43945
  • 1,000 pcs$0.34443

Part Number:
TK7A90E,S4X
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 900V TO220SIS.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - IGBTs - Single, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Zener - Arrays and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK7A90E,S4X electronic components. TK7A90E,S4X can be shipped within 24 hours after order. If you have any demands for TK7A90E,S4X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK7A90E,S4X Product Attributes

Part Number : TK7A90E,S4X
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 900V TO220SIS
Series : π-MOSVIII
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 900V
Current - Continuous Drain (Id) @ 25°C : 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs : 32nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 25V
FET Feature : -
Power Dissipation (Max) : 45W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack