Part Number :
TK7A90E,S4X
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 900V TO220SIS
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
900V
Current - Continuous Drain (Id) @ 25°C :
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2 Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 25V
Power Dissipation (Max) :
45W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220SIS
Package / Case :
TO-220-3 Full Pack