TK7A90E,S4X Pricing (USD) [55337pcs Stock]
- 1 pcs$0.77767
- 50 pcs$0.62782
- 100 pcs$0.56502
- 500 pcs$0.43945
- 1,000 pcs$0.34443
- Part Number:
- TK7A90E,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 900V TO220SIS.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays, Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK7A90E,S4X electronic components. TK7A90E,S4X can be shipped within 24 hours after order. If you have any demands for TK7A90E,S4X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK7A90E,S4X Product Attributes
Part Number :
TK7A90E,S4X
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 900V TO220SIS
Series :
π-MOSVIII
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
900V
Current - Continuous Drain (Id) @ 25°C :
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2 Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 700µA
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
45W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220SIS
Package / Case :
TO-220-3 Full Pack
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