ON Semiconductor - NTMFS5832NLT1G

KEY Part #: K6416240

NTMFS5832NLT1G Pricing (USD) [224029pcs Stock]

  • 1 pcs$0.16510
  • 1,500 pcs$0.15272

Part Number:
NTMFS5832NLT1G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 40V 110A SO-8FL.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs and Thyristors - TRIACs ...
Competitive Advantage:
We specialize in ON Semiconductor NTMFS5832NLT1G electronic components. NTMFS5832NLT1G can be shipped within 24 hours after order. If you have any demands for NTMFS5832NLT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMFS5832NLT1G Product Attributes

Part Number : NTMFS5832NLT1G
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 40V 110A SO-8FL
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Current - Continuous Drain (Id) @ 25°C : 20A (Ta), 111A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 51nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2700pF @ 25V
FET Feature : -
Power Dissipation (Max) : 3.1W (Ta), 96W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 5-DFN (5x6) (8-SOFL)
Package / Case : 8-PowerTDFN, 5 Leads

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