Infineon Technologies - IRF5802TRPBF

KEY Part #: K6416203

IRF5802TRPBF Pricing (USD) [420018pcs Stock]

  • 1 pcs$0.08806
  • 3,000 pcs$0.06959

Part Number:
IRF5802TRPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 150V 0.9A 6-TSOP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Transistors - Special Purpose, Power Driver Modules and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Infineon Technologies IRF5802TRPBF electronic components. IRF5802TRPBF can be shipped within 24 hours after order. If you have any demands for IRF5802TRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF5802TRPBF Product Attributes

Part Number : IRF5802TRPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 150V 0.9A 6-TSOP
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 150V
Current - Continuous Drain (Id) @ 25°C : 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.2 Ohm @ 540mA, 10V
Vgs(th) (Max) @ Id : 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 6.8nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 88pF @ 25V
FET Feature : -
Power Dissipation (Max) : 2W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : Micro6™(TSOP-6)
Package / Case : SOT-23-6 Thin, TSOT-23-6