FDG311N Pricing (USD) [529955pcs Stock]
- 1 pcs$0.07014
- 3,000 pcs$0.06979
- Part Number:
- FDG311N
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 20V 1.9A SC70-6.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDG311N electronic components. FDG311N can be shipped within 24 hours after order. If you have any demands for FDG311N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDG311N Product Attributes
Part Number :
FDG311N
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 20V 1.9A SC70-6
Series :
PowerTrench®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
115 mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4.5nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
270pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
750mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
SC-88 (SC-70-6)
Package / Case :
6-TSSOP, SC-88, SOT-363
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