CSD17308Q3T Pricing (USD) [173302pcs Stock]
- 1 pcs$0.24159
- 250 pcs$0.24038
- 500 pcs$0.21244
- 750 pcs$0.18560
- 1,250 pcs$0.16771
- Part Number:
- CSD17308Q3T
- Manufacturer:
- Texas Instruments
- Detailed description:
- MOSFET N-CH 30V 50A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Power Driver Modules, Thyristors - TRIACs, Thyristors - SCRs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - DIACs, SIDACs and Transistors - Bipolar (BJT) - Arrays ...
- Competitive Advantage:
- We specialize in Texas Instruments CSD17308Q3T electronic components. CSD17308Q3T can be shipped within 24 hours after order. If you have any demands for CSD17308Q3T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD17308Q3T Product Attributes
Part Number :
CSD17308Q3T
Manufacturer :
Texas Instruments
Description :
MOSFET N-CH 30V 50A
Series :
NexFET™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
14A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
3V, 8V
Rds On (Max) @ Id, Vgs :
10.3 mOhm @ 10A, 8V
Vgs(th) (Max) @ Id :
1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
5.1nC @ 4.5V
Vgs (Max) :
+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds :
700pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2.7W (Ta), 28W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-VSON-CLIP (3.3x3.3)
Package / Case :
8-PowerTDFN
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