NVC3S5A51PLZT1G Pricing (USD) [371572pcs Stock]
- 1 pcs$0.09954
- 3,000 pcs$0.09652
- Part Number:
- NVC3S5A51PLZT1G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET P-CHANNEL 60V 1.8A 3-CPH.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - Bridge Rectifiers, Diodes - Rectifiers - Arrays, Diodes - Zener - Single, Transistors - IGBTs - Single, Transistors - Special Purpose and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in ON Semiconductor NVC3S5A51PLZT1G electronic components. NVC3S5A51PLZT1G can be shipped within 24 hours after order. If you have any demands for NVC3S5A51PLZT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVC3S5A51PLZT1G Product Attributes
Part Number :
NVC3S5A51PLZT1G
Manufacturer :
ON Semiconductor
Description :
MOSFET P-CHANNEL 60V 1.8A 3-CPH
Series :
-
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id :
2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
6nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
262pF @ 20V
FET Feature :
-
Power Dissipation (Max) :
1.2W (Ta)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
3-CPH
Package / Case :
TO-236-3, SC-59, SOT-23-3
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