PSMN018-100ESFQ Pricing (USD) [170600pcs Stock]
- 1 pcs$0.21681
- 5,000 pcs$0.20252
- Part Number:
- PSMN018-100ESFQ
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CHANNEL 100V 53A I2PAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PSMN018-100ESFQ electronic components. PSMN018-100ESFQ can be shipped within 24 hours after order. If you have any demands for PSMN018-100ESFQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN018-100ESFQ Product Attributes
Part Number :
PSMN018-100ESFQ
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CHANNEL 100V 53A I2PAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
53A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
7V, 10V
Rds On (Max) @ Id, Vgs :
18 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
21.4nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1482pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
111W (Ta)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I2PAK
Package / Case :
TO-220-3, Short Tab
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