Toshiba Semiconductor and Storage - TK6P53D(T6RSS-Q)

KEY Part #: K6420124

TK6P53D(T6RSS-Q) Pricing (USD) [162137pcs Stock]

  • 1 pcs$0.25219
  • 2,000 pcs$0.25094

Part Number:
TK6P53D(T6RSS-Q)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 525V 6A DPAK-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Thyristors - SCRs - Modules, Transistors - JFETs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modules, Thyristors - TRIACs and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK6P53D(T6RSS-Q) electronic components. TK6P53D(T6RSS-Q) can be shipped within 24 hours after order. If you have any demands for TK6P53D(T6RSS-Q), Please submit a Request for Quotation here or send us an email:
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ISO-28000-2007
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TK6P53D(T6RSS-Q) Product Attributes

Part Number : TK6P53D(T6RSS-Q)
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 525V 6A DPAK-3
Series : π-MOSVII
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 525V
Current - Continuous Drain (Id) @ 25°C : 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.3 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id : 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 600pF @ 25V
FET Feature : -
Power Dissipation (Max) : 100W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63