Infineon Technologies - IRLR3717TRPBF

KEY Part #: K6420183

IRLR3717TRPBF Pricing (USD) [167648pcs Stock]

  • 1 pcs$0.22403
  • 2,000 pcs$0.22292

Part Number:
IRLR3717TRPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 20V 120A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs - Modules, Thyristors - TRIACs, Transistors - IGBTs - Modules and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies IRLR3717TRPBF electronic components. IRLR3717TRPBF can be shipped within 24 hours after order. If you have any demands for IRLR3717TRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRLR3717TRPBF Product Attributes

Part Number : IRLR3717TRPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 20V 120A DPAK
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 4 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id : 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 31nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2830pF @ 10V
FET Feature : -
Power Dissipation (Max) : 89W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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