Infineon Technologies - IPC173N10N3X1SA1

KEY Part #: K6418226

IPC173N10N3X1SA1 Pricing (USD) [55933pcs Stock]

  • 1 pcs$1.44109

Part Number:
IPC173N10N3X1SA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 100V 1A SAWN ON FOIL.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Single, Diodes - RF, Diodes - Bridge Rectifiers, Thyristors - TRIACs, Transistors - Special Purpose, Thyristors - SCRs - Modules and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Infineon Technologies IPC173N10N3X1SA1 electronic components. IPC173N10N3X1SA1 can be shipped within 24 hours after order. If you have any demands for IPC173N10N3X1SA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPC173N10N3X1SA1 Product Attributes

Part Number : IPC173N10N3X1SA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 100V 1A SAWN ON FOIL
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 1A (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Input Capacitance (Ciss) (Max) @ Vds : -
FET Feature : -
Power Dissipation (Max) : -
Operating Temperature : -
Mounting Type : Surface Mount
Supplier Device Package : Sawn on foil
Package / Case : Die

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