Diodes Incorporated - ZXMN3A06DN8TA

KEY Part #: K6522840

ZXMN3A06DN8TA Pricing (USD) [123754pcs Stock]

  • 1 pcs$0.29888
  • 500 pcs$0.27278

Part Number:
ZXMN3A06DN8TA
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET 2N-CH 30V 4.9A 8-SOIC.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - RF, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Diodes Incorporated ZXMN3A06DN8TA electronic components. ZXMN3A06DN8TA can be shipped within 24 hours after order. If you have any demands for ZXMN3A06DN8TA, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMN3A06DN8TA Product Attributes

Part Number : ZXMN3A06DN8TA
Manufacturer : Diodes Incorporated
Description : MOSFET 2N-CH 30V 4.9A 8-SOIC
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 4.9A
Rds On (Max) @ Id, Vgs : 35 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs : 17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 796pF @ 25V
Power - Max : 1.8W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SOP