Part Number :
TPC8213-H(TE12LQ,M
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET 2N-CH 60V 5A SOP8
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
5A
Rds On (Max) @ Id, Vgs :
50 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id :
2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
625pF @ 10V
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-SOIC (0.173", 4.40mm Width)
Supplier Device Package :
8-SOP (5.5x6.0)