SI3900DV-T1-GE3 Pricing (USD) [203660pcs Stock]
- 1 pcs$0.18161
- 3,000 pcs$0.17054
- Part Number:
- SI3900DV-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET 2N-CH 20V 2A 6-TSOP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Single, Thyristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Diodes - Rectifiers - Single, Transistors - IGBTs - Single and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SI3900DV-T1-GE3 electronic components. SI3900DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3900DV-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3900DV-T1-GE3 Product Attributes
Part Number :
SI3900DV-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2N-CH 20V 2A 6-TSOP
Series :
TrenchFET®
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
2A
Rds On (Max) @ Id, Vgs :
125 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
-
Power - Max :
830mW
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package :
6-TSOP
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