STF9NM60N Pricing (USD) [33639pcs Stock]
- 1 pcs$1.09960
- 10 pcs$0.99173
- 100 pcs$0.79681
- 500 pcs$0.61973
- 1,000 pcs$0.51349
- Part Number:
- STF9NM60N
- Manufacturer:
- STMicroelectronics
- Detailed description:
- MOSFET N-CH 600V 6.5A TO220FP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - JFETs, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - Special Purpose, Power Driver Modules and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in STMicroelectronics STF9NM60N electronic components. STF9NM60N can be shipped within 24 hours after order. If you have any demands for STF9NM60N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STF9NM60N Product Attributes
Part Number :
STF9NM60N
Manufacturer :
STMicroelectronics
Description :
MOSFET N-CH 600V 6.5A TO220FP
Series :
MDmesh™ II
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
745 mOhm @ 3.25A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17.4nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
452pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
25W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220FP
Package / Case :
TO-220-3 Full Pack
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